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INTEGRATED CIRCUITS
DATA SHEET
UBA2030T Full bridge driver IC
Preliminary specification Supersedes data of 1997 Sep 16 File under Integrated Circuits, IC11 1999 Aug 10
Philips Semiconductors
Preliminary specification
Full bridge driver IC
FEATURES * Full bridge driver * Integrated bootstrap diodes * Integrated high voltage level shift function * High voltage input (570 V maximum) for the internal supply * Adjustable `dead time' * Adjustable oscillator frequency * High voltage level shifter for the bridge enable function * Shut-down function. APPLICATIONS * The UBA2030T can drive the MOSFETs in any type of load configured as a full bridge * The circuit is intended as a commutator for High Intensity Discharge (HID) lamps. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME UBA2030T SO24 DESCRIPTION plastic small outline package; 24 leads; body width 7.5 mm GENERAL DESCRIPTION
UBA2030T
The UBA2030T is a high voltage integrated circuit fabricated using the BCD750 power logic process. The circuit is designed for driving the MOSFETs in a full bridge configuration. In addition, it features a shut-down function, an adjustable oscillator and a PMOS high voltage level shifter to control the bridge enable function. To guarantee an accurate 50% duty factor, the oscillator signal passes through a divider before being fed to the output drivers.
VERSION SOT137-1
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Philips Semiconductors
Preliminary specification
Full bridge driver IC
QUICK REFERENCE DATA SYMBOL High voltage VHV Istrtu high voltage supply 0 - at fbridge = 500 Hz; no load 14.0 11.5 - 0.7 15.5 13.0 PARAMETER CONDITIONS MIN. TYP.
UBA2030T
MAX.
UNIT
570
V
Start-up; powered via pin HV start-up current 1.0 17.0 14.5 mA V V Vth(osc strt) start oscillating threshold voltage Vth(osc stp) stop oscillating threshold voltage Output drivers Io(source) Io(sink) output source current output sink current VDD = VFSL = VFSR = 15 V; VGHR = VGHL = VGLR = VGLL = 0 V 140 190 260 240 320 mA mA
200 VDD = VFSL = VFSR = 15 V; VGHR = VGHL = VGLR = VGLL = 15 V EXO pin connected to SGND 50
Internal oscillator fbridge fosc(ext) bridge oscillating frequency - - 50000 Hz
External oscillator external oscillator frequency RC pin connected to SGND; f osc(ext) f bridge = ----------------2 100 100000 Hz
Dead time control tdead dead time control range (adjusted externally) 0.4 - 4 s
Bridge enable IIH IIL VIH VIL HIGH-level input current LOW-level input current bridge enable active bridge enable not active V SD shut-down active; ------------- > 5 V/ms t shut-down not active; V SD ------------- > 5 V/ms t 100 0 - - - - 700 20 A A V V
Shut-down HIGH-level input voltage LOW-level input voltage 4.5 0 VDD 0.5
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Philips Semiconductors
Preliminary specification
Full bridge driver IC
BLOCK DIAGRAM
UBA2030T
handbook, full pagewidth
HV 18
BER 8
BE 7
10 HIGHER LEFT DRIVER 11 12 15 BRIDGE ENABLE HIGH VOLTAGE LEVEL SHIFTER OSCILLATOR HIGHER RIGHT DRIVER 14 13
FSL GHL SHL FSR GHR SHR GLL PGND GLR
UBA2030T /2
LOWER LEFT DRIVER 3 2 LOW VOLTAGE LEVEL SHIFTER 21 SD LOWER RIGHT DRIVER 4, 6, 9, 16, 17, 19
MGK590
LOW VOLTAGE SUPPLY 24 SGND 23 VDD 5 20
LOGIC 22 DTC
1
RC EXO
n.c.
Fig.1 Block diagram.
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Philips Semiconductors
Preliminary specification
Full bridge driver IC
PINNING SYMBOL GLR PGND GLL n.c. RC n.c. BE BER n.c. FSL GHL SHL SHR GHR FSR n.c. n.c. HV n.c. EXO SD DTC VDD SGND PIN 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 DESCRIPTION gate of lower right MOSFET power ground for sources of lower left and right MOSFETs gate of lower left MOSFET not connected RC input for internal oscillator not connected bridge enable control input bridge enable reference input not connected floating supply voltage left output gate of higher left MOSFET source of higher left MOSFET source of higher right MOSFET gate of higher right MOSFET floating supply voltage right output not connected not connected high voltage supply input not connected external oscillator input shut-down input `dead time' control input internal (low voltage) supply signal ground
handbook, halfpage
UBA2030T
GLR 1 PGND 2 GLL 3 n.c. 4 RC 5 n.c. 6
24 SGND 23 VDD 22 DTC 21 SD 20 EXO 19 n.c.
UBA2030T
BE 7 BER 8 n.c. 9 FSL 10 GHL 11 SHL 12
MGK589
18 HV 17 n.c. 16 n.c. 15 FSR 14 GHR 13 SHR
Fig.2 Pin configuration.
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Philips Semiconductors
Preliminary specification
Full bridge driver IC
FUNCTIONAL DESCRIPTION Supply voltage The UBA2030T is powered by a single supply voltage connected to the HV pin (the full bridge supply could be used, for example). The IC generates its own low voltage supply for driving the internal circuitry and the MOSFETs in the full bridge, removing the need for an additional low voltage supply. A capacitor must be connected between the VDD pin and SGND to obtain a ripple-free internal supply voltage. Start-up When the power is turned on, the UBA2030T enters a start-up phase; the high side MOSFETs are switched off and the low side MOSFETs switched on. During start-up, the bootstrap capacitors are charged and the bridge output current is zero. Oscillation At the point where the supply voltage at the HV pin crosses the `start oscillating threshold', the bridge begins commutating between the following two defined states: Higher left and lower right MOSFETs on, higher right and lower left MOSFETs off Higher left and lower right MOSFETs off, higher right and lower left MOSFETs on. When the internal oscillator is used, the bridge commutating frequency is determined by the values of an external resistor and capacitor. In this mode, the EXO pin must be connected to SGND.
UBA2030T
When an external oscillator is used, its output must be connected to the EXO pin; the internal oscillator must be disabled by connecting the RC pin to SGND. The bridge commutating frequency is half the oscillator frequency due to a /2 circuit which guarantees an accurate 50% duty factor. The time between turning off the conducting pair of MOSFETs and turning on the other pair, the `dead time', can be adjusted using an external resistor. If the supply voltage at the HV pin falls below the `stop oscillating threshold', the UBA2030T re-enters the start-up phase. Bridge enable The bridge enable function allows the bridge to be held in its current state. When active, it connects the RC pin to SGND, disabling the internal oscillator. If the bridge enable function is activated during `dead time', the bridge is allowed to enter the next conducting state before being held. Oscillations resume the instant the bridge enable function is turned off. A timing diagram is shown in Fig.3. To hold the bridge, an external control circuit is required to provide a source current to the bridge enable control input (pin BE), and to supply a reference voltage to pin BER, (see Fig.6). Shut-down The active HIGH shut-down input (pin SD) can be used at any time to turn off all four MOSFETs. However, if the supply voltage drops below the `stop oscillating threshold', the bridge re-enters the start-up phase even if the shut-down function is active.
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Philips Semiconductors
Preliminary specification
Full bridge driver IC
UBA2030T
handbook, full pagewidth
on VBE off
VRC
VGHL VGLR
VGHR VGLL time dead time
MGK594
Fig.3 Timing diagram.
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Philips Semiconductors
Preliminary specification
Full bridge driver IC
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VDD VHV PARAMETER supply voltage (low voltage) supply voltage (high voltage) note 1 VSHL = VSHR = 570 V, note 1 VSHL = VSHR = 0 V VSHL; VSHR source voltage for higher right and left MOSFETs VPGND Vi(BER) Vi(BE) Ii(BE) Vi(EXO) VSD SR Tj Tamb Tstg Ves power ground voltage bridge enable reference input voltage bridge enable control input voltage bridge enable control input current input voltage from external oscillator on pin EXO shut-down input voltage on pin SD slew rate at output pins junction temperature ambient temperature storage temperature electrostatic handling pin HV pins BE, BER, FSL, GHL, SHL, SHR, GHR and FSR Notes note 2 - - repetitive Vi(BER) = 570 V Vi(BER) = 0 V with reference to PGND and SGND with reference to SGND CONDITIONS MIN. 0 0 570 0 -10 -7 0 570 0 0 0 0 -4 -40 -40 -55
UBA2030T
MAX. 18 570 588 18 +570 +10 570 580 10 700 VDD VDD +4 +150 +150 +150
UNIT V V V V V V V V V A V V V/ns C C C
VFSL; VFSR floating supply voltage
1250 V 1500 V
1. This value is guaranteed down to Tj = -25 C. From Tj = -25 to -40 C, the voltage on pin HV is limited to 530 V and the floating supply voltage (VFSL, VFSR) is limited to a maximum value of 548 V. 2. In accordance with the human body model: equivalent to discharging a 100 pF capacitor through a 1.5 k series resistor. THERMAL CHARACTERISTICS SYMBOL Rth(j-a) PARAMETER thermal resistance from junction to ambient VALUE 70 UNIT K/W
QUALITY SPECIFICATION In accordance with "SNW-FQ-611 part E". The numbers of the quality specification can be found in the "Quality Reference Handbook".
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Philips Semiconductors
Preliminary specification
Full bridge driver IC
CHARACTERISTICS Tj = 25 C; all voltages with respect to PGND; positive currents flow into the IC. SYMBOL High voltage VHV IL VPGND(float); VSGND(float) Istrtu Vstrtu Vth(osc strt) Vth(osc stp) Vhys IHV VDD high voltage supply leakage current floating ground voltage with HV = 570 V applied to pins BER, SHR and SHL 0 - 0 - - - PARAMETER CONDITIONS MIN. TYP.
UBA2030T
MAX.
UNIT
570 5 5
V A V
Start-up, powered via the HV pin; note 1 start-up current start-up voltage start oscillating threshold voltage stop oscillating threshold voltage hysteresis voltage supply current internal supply voltage (low voltage) between oscillation start and stop levels - high left and right MOSFETs off; low - left and right MOSFETs on fbridge = 500 Hz; no load 14.0 11.5 2.0 0.7 6 15.5 13.0 2.5 0.5 15.3 11 8.5 1.0 - 17.0 14.5 3.0 0.7 16.5 11.5 9.0 mA V V V V mA V V V
fbridge = 500 Hz; no load; VHV = 50 V 0.3 fbridge = 500 Hz; no load; VHV = 50 V 14.0 fbridge = 500 Hz; no load; at start oscillating threshold fbridge = 500 Hz; no load; at stop oscillating threshold 10.5 8.0
Output drivers Vo(GHL,GHR) output voltage on pins GHL at power-up; no load; VHV = 50 V; and GHR for gates of higher fbridge = 500 Hz; right and left MOSFETs output voltage on pins GLL and GLR for gates of lower right and left MOSFETs time difference between diagonally placed output drivers higher MOSFETs on resistance higher MOSFETs off resistance lower MOSFETs on resistance lower MOSFETs off resistance bootstrap diode voltage drop VFSR = VFSL = 15 V; Isource = 50 mA VFSR = VFSL = 15 V; Isink = 50 mA VDD = 15 V; Isource = 50 mA VDD = 15 V; Isink = 50 mA Idiode = 1 mA 13.2 14.5 16.5 V
Vo(GLL,GLR)
14.0
15.3
16.5
V
t
0
-
100
ns
RonH RoffH RonL RoffL Vdiode
33 11 33 11 0.8
39 14 39 14 1.0
46 17 46 17 1.2
V
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Philips Semiconductors
Preliminary specification
Full bridge driver IC
UBA2030T
SYMBOL Io(source) Io(sink) IFSL(float); IFSR(float) fbridge fosc/T
PARAMETER output source current output sink current floating supply current
CONDITIONS VDD = VFSL = VFSR = 15 V; VGHR = VGHL = VGLR = VGLL = 0 V VDD = VFSL = VFSR = 15 V; VGHR = VGHL = VGLR = VGLL = 15 V VFSR = VFSL = 15 V
MIN. 140 200 -
TYP. 190 260 15
MAX. 240 320 -
UNIT mA mA A
Internal oscillator; notes 2 and 3 bridge oscillating frequency oscillator frequency dependency with respect to temperature oscillator frequency dependency with respect to VDD HIGH-level trip point LOW-level trip point oscillator constant EXO pin connected to SGND fixed RC; T = -40 C to +150 C 50 0 - - 50000 10 Hz %
fosc/VDD
fixed RC; VDD = 12 to 16 V
0
-
10
%
kH kL kosc
VRCH = kH x VDD VRCL = kL x VDD 1 f bridge = -------------------------------------------------( k osc x R osc x C osc )
0.67 - 2.34
0.71 0.01 2.49
0.75 - 2.64
External oscillator; note 2 fosc(ext) external oscillator frequency RC pin connected to SGND; f osc(ext) f bridge = ----------------2 HIGH-level input voltage LOW-level input voltage input current V EXO ----------------- > 5 V/ms t V EXO ----------------- > 5 V/ms t 100 - 100000 Hz
VIH VIL Ii(EXO) tdead kDT IIH IIL VBE - VBER
4.5 0 0
- - - - 270 - 1.1 - 2.6 5.5
VDD 0.5 50
V V A s k/s A mA A V V
Dead time control; notes 2 and 4 dead time control range (adjusted externally) dead time variable RDT = kDT x tdead - 70 k bridge enable active VBE - VBER = 5 V bridge enable not active IIH = 100 A 2.1 3.5 3.0 7.5 0.4 180 4 380
Bridge enable; notes 2 and 5 HIGH-level input current; note 6 LOW-level input current threshold voltage with reference to HV with reference to PGND 100 - 0 700 - 20
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Philips Semiconductors
Preliminary specification
Full bridge driver IC
UBA2030T
SYMBOL Shut-down; note 2 VIH VIL
PARAMETER
CONDITIONS
MIN. - -
TYP.
MAX.
UNIT
HIGH-level input voltage LOW-level input voltage
V SD shut-down active; ------------- > 5 V/ms t shut-down not active; V SD ------------- > 5 V/ms t
4.5 0
VDD 0.5
V V
Ii(SD) Notes
input current
0
-
50
A
1. The current into pin HV is internally limited to 15 mA at Tj = 25 C and to 10 mA at Tj = 150 C. 2. VDD = 15 V. 3. The bridge frequency can be calculated using Equation (1). 4. The `dead time' is adjusted using an external resistor; see Equation (2). 5. This function is disabled when using an external oscillator. 6. IIH < 2.1 mA when the condition is VBE - VBER = 5 V at Tj = 150 C. Design equations BRIDGE COMMUTATION FREQUENCY The internal /2 circuit requires the frequency of the internal or external oscillator to be twice the bridge frequency. When the internal oscillator is used, the bridge frequency can be adjusted using an external resistor and capacitor: 1 f bridge = ------------------------------------------2.8 x R osc x C osc (1) Where: Rosc(min) = 200 k Rosc(max) = 2 M (with low leakage current). DEAD TIME R DT = 270 x t dead - 70
(2)
The `dead time' (tdead) can be adjusted using an external resistor (RDT) connected between DTC and SGND: Units are k for RDT and s for tdead. Where: RDT(min) = 50 k RDT(max) = 1 M.
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Philips Semiconductors
Preliminary specification
Full bridge driver IC
APPLICATION INFORMATION Basic application A basic full bridge configuration with an HID lamp is shown in Fig.4. The bridge enable and shut-down functions are not used in this application. The EXO, BE, BER and SD pins are connected to system ground. The IC is powered by the high voltage supply.
UBA2030T
When the internal oscillator is used; the bridge commutating frequency is determined by the values of Rosc and Cosc. The bridge starts oscillating when the HV supply voltage exceeds the `start oscillating threshold' (typically 15.5 V). If the supply voltage at the HV pin falls below the `stop oscillating threshold' (typically 13 V), the UBA2030T enters the start-up state.
handbook, full pagewidth
high voltage 570 V (max) SHR GHR C2 FSR HV EXO Ci SD DTC VDD SGND RDT Cosc system ground Rosc 13 14 15 18 12 11 10 8 SHL GHL FSL BER BE RC GLL PGND GLR LL C4 C5 C1 IGNITOR LAMP LR HL HR
20 UBA2030T 7 21 22 23 24 5 3 2 1
C3
MGK592
Fig.4 Basic configuration.
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Philips Semiconductors
Preliminary specification
Full bridge driver IC
Application with external control Figure 5 shows an application containing an external oscillator control circuit referenced to system ground. The RC, BER and BE pins are connected to system
UBA2030T
ground. The bridge commutation frequency is determined by the external oscillator. The shut-down input (pin SD) can be used to quickly turn off all four MOSFETs in the full bridge.
high voltage handbook, full pagewidth 570 V (max)
SHR GHR C2 FSR HV EXTERNAL OSCILLATOR CONTROL CIRCUIT EXO SD DTC VDD SGND C3 RDT
13 14 15 18
12 11 10 8
SHL GHL FSL BER BE RC GLL PGND GLR C1
HL
HR
IGNITOR LL C4
LAMP LR C5
20 UBA2030T 7 21 22 23 24 5 3 2 1
Ci
MGK593
system ground
Fig.5 External control configuration.
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Philips Semiconductors
Preliminary specification
Full bridge driver IC
Automotive application The life of an HID lamp depends on the rate of sodium migration through its quartz wall. To minimize this, the lamp must be operated negative with respect to system ground.
UBA2030T
Figure 6 shows a full bridge with an HID lamp in an automotive environment, and a control circuit referenced to the high side of the bridge. The BER and HV pins are connected to system ground. The bridge can be held in its current state using the BE pin. See the timing diagram in Fig.3.
handbook, full pagewidth
CONTROL UNIT
system ground SHR GHR C2 FSR HV EXO Ci SD DTC VDD SGND RDT Cosc Rosc 13 14 15 18 12 11 10 8 SHL GHL FSL BER BE RC GLL PGND GLR LL C4 C5 C1 IGNITOR LAMP LR HL HR
20 UBA2030T 7 21 22 23 24 5 3 2 1
C3
MGK591
high voltage -570 V (max)
Fig.6 Automotive configuration (example 1).
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Philips Semiconductors
Preliminary specification
Full bridge driver IC
Additional application information The UBA2030T is the commutator part in a complete system for driving an HID lamp. The life of the HID lamp can depend on the amount of sodium that migrates through its quartz wall. To minimize this migration, the lamp must be operated negative with respect to system ground. Figure 7 shows a full bridge with an HID lamp in a typical automotive configuration using a control unit referenced to the high side of the bridge. Pin BER is connected to system ground. The bridge can be held in its current state by pin BE. The supply current to the internal low voltage circuit is fed to pin HV which can be connected to either system ground or to a low voltage DC supply, such as a battery, as indicated by the dotted lines in Fig.7.
UBA2030T
The diode in series with the supply to pin HV prevents Ci being discharged if the lamp is shorted during the ignition phase. C6 should be positioned as close as possible to pin DTC. The control unit drives the MOSFETs relatively hard which can cause radiation. To prevent switching the MOSFETs hard, a resistor can be connected in series with each gate. In all applications, the voltage on pin HV must not be allowed to become lower than the voltage at pin VDD during the start-up phase or during normal operation, otherwise the full bridge will not operate correctly. During the start-up phase, pin EXO and pin SD should both be LOW. The voltage as a function of time at pin EXO and pin SD should be >5 V/ms.
from low pagewidth handbook, fullvoltage DC supply CONTROL UNIT
system ground SHR GHR C2 FSR HV EXO Ci Ci SD DTC VDD C6 SGND 13 14 15 18 12 11 10 8 SHL GHL FSL BER BE RC GLL PGND GLR C1
HL
HR
IGNITOR LL C4
LAMP LR C5
20 UBA2030T 7 21 22 23 24 5 3 2 1
C3
RDT
Cosc
Rosc
MGL763
high voltage -570 V (max) C1 = 150 nF. C2 = 150 nF. C3 = 220 nF. C6 = 100 pF. Cosc = 10 nF. Rosc = 147 k. RDT = 50 to 1000 k (220 k = a `dead time' of 1 s).
Fig.7 Automotive configuration (example 2).
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Philips Semiconductors
Preliminary specification
Full bridge driver IC
PACKAGE OUTLINE SO24: plastic small outline package; 24 leads; body width 7.5 mm
UBA2030T
SOT137-1
D
E
A X
c y HE vMA
Z 24 13
Q A2 A1 pin 1 index Lp L 1 e bp 12 wM detail X (A 3) A
0
5 scale
10 mm
DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT mm inches A max. 2.65 0.10 A1 0.30 0.10 A2 2.45 2.25 A3 0.25 0.01 bp 0.49 0.36 c 0.32 0.23 D (1) 15.6 15.2 0.61 0.60 E (1) 7.6 7.4 0.30 0.29 e 1.27 0.050 HE 10.65 10.00 L 1.4 Lp 1.1 0.4 Q 1.1 1.0 0.043 0.039 v 0.25 0.01 w 0.25 0.01 y 0.1 0.004 Z
(1)
0.9 0.4 0.035 0.016
0.012 0.096 0.004 0.089
0.019 0.013 0.014 0.009
0.419 0.043 0.055 0.394 0.016
8o 0o
Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. OUTLINE VERSION SOT137-1 REFERENCES IEC 075E05 JEDEC MS-013AD EIAJ EUROPEAN PROJECTION
ISSUE DATE 95-01-24 97-05-22
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Philips Semiconductors
Preliminary specification
Full bridge driver IC
SOLDERING Introduction to soldering surface mount packages This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our "Data Handbook IC26; Integrated Circuit Packages" (document order number 9398 652 90011). There is no soldering method that is ideal for all surface mount IC packages. Wave soldering is not always suitable for surface mount ICs, or for printed-circuit boards with high population densities. In these situations reflow soldering is often used. Reflow soldering Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. Several methods exist for reflowing; for example, infrared/convection heating in a conveyor type oven. Throughput times (preheating, soldering and cooling) vary between 100 and 200 seconds depending on heating method. Typical reflow peak temperatures range from 215 to 250 C. The top-surface temperature of the packages should preferable be kept below 230 C. Wave soldering Conventional single wave soldering is not recommended for surface mount devices (SMDs) or printed-circuit boards with a high component density, as solder bridging and non-wetting can present major problems. To overcome these problems the double-wave soldering method was specifically developed. Manual soldering
UBA2030T
If wave soldering is used the following conditions must be observed for optimal results: * Use a double-wave soldering method comprising a turbulent wave with high upward pressure followed by a smooth laminar wave. * For packages with leads on two sides and a pitch (e): - larger than or equal to 1.27 mm, the footprint longitudinal axis is preferred to be parallel to the transport direction of the printed-circuit board; - smaller than 1.27 mm, the footprint longitudinal axis must be parallel to the transport direction of the printed-circuit board. The footprint must incorporate solder thieves at the downstream end. * For packages with leads on four sides, the footprint must be placed at a 45 angle to the transport direction of the printed-circuit board. The footprint must incorporate solder thieves downstream and at the side corners. During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. Typical dwell time is 4 seconds at 250 C. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications.
Fix the component by first soldering two diagonally-opposite end leads. Use a low voltage (24 V or less) soldering iron applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 C. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 C.
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Philips Semiconductors
Preliminary specification
Full bridge driver IC
Suitability of surface mount IC packages for wave and reflow soldering methods SOLDERING METHOD PACKAGE WAVE BGA, SQFP HLQFP, HSQFP, HSOP, HTQFP, HTSSOP, SMS PLCC(3), SO, SOJ LQFP, QFP, TQFP SSOP, TSSOP, VSO Notes not suitable not not not suitable(2) recommended(3)(4) recommended(5) suitable suitable suitable suitable suitable suitable
UBA2030T
REFLOW(1)
1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum temperature (with respect to time) and body size of the package, there is a risk that internal or external package cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the Drypack information in the "Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods". 2. These packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink (at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version). 3. If wave soldering is considered, then the package must be placed at a 45 angle to the solder wave direction. The package footprint must incorporate solder thieves downstream and at the side corners. 4. Wave soldering is only suitable for LQFP, TQFP and QFP packages with a pitch (e) equal to or larger than 0.8 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm. 5. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm. DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
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Philips Semiconductors
Preliminary specification
Full bridge driver IC
NOTES
UBA2030T
1999 Aug 10
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Philips Semiconductors - a worldwide company
Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 20 0733, Fax. +375 172 20 0773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 68 9211, Fax. +359 2 68 9102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381, Fax. +1 800 943 0087 China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel. +852 2319 7888, Fax. +852 2319 7700 Colombia: see South America Czech Republic: see Austria Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V, Tel. +45 33 29 3333, Fax. +45 33 29 3905 Finland: Sinikalliontie 3, FIN-02630 ESPOO, Tel. +358 9 615 800, Fax. +358 9 6158 0920 France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex, Tel. +33 1 4099 6161, Fax. +33 1 4099 6427 Germany: Hammerbrookstrae 69, D-20097 HAMBURG, Tel. +49 40 2353 60, Fax. +49 40 2353 6300 Hungary: see Austria India: Philips INDIA Ltd, Band Box Building, 2nd floor, 254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025, Tel. +91 22 493 8541, Fax. +91 22 493 0966 Indonesia: PT Philips Development Corporation, Semiconductors Division, Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510, Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080 Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel. +353 1 7640 000, Fax. +353 1 7640 200 Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053, TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007 Italy: PHILIPS SEMICONDUCTORS, Via Casati, 23 - 20052 MONZA (MI), Tel. +39 039 203 6838, Fax +39 039 203 6800 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5057 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. +82 2 709 1412, Fax. +82 2 709 1415 Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. +60 3 750 5214, Fax. +60 3 757 4880 Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel. +9-5 800 234 7381, Fax +9-5 800 943 0087 Middle East: see Italy Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Pakistan: see Singapore Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 58088 Newville 2114, Tel. +27 11 471 5401, Fax. +27 11 471 5398 South America: Al. Vicente Pinzon, 173, 6th floor, 04547-130 SAO PAULO, SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 821 2382 Spain: Balmes 22, 08007 BARCELONA, Tel. +34 93 301 6312, Fax. +34 93 301 4107 Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 5985 2000, Fax. +46 8 5985 2745 Switzerland: Allmendstrasse 140, CH-8027 ZURICH, Tel. +41 1 488 2741 Fax. +41 1 488 3263 Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2886, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. +66 2 745 4090, Fax. +66 2 398 0793 Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye, ISTANBUL, Tel. +90 216 522 1500, Fax. +90 216 522 1813 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 208 730 5000, Fax. +44 208 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381, Fax. +1 800 943 0087 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 62 5344, Fax.+381 11 63 5777
For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1999
Internet: http://www.semiconductors.philips.com
SCA 67
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
295002/02/pp20
Date of release: 1999
Aug 10
Document order number:
9397 750 05309

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